kr905p代替wpm1481,fdma905p----封装dfn2x2-6l,p沟道。
特征、相关参数:
vds = -12v,vgs=±8,id = -15a
rds(on) <15mΩ @ vgs=-4.5v ;
rds(on) <20mΩ @ vgs=-2.5v ;
rds(on) <45mΩ @ vgs=-1.8v ;
rds(on) <80mΩ @ vgs=-1.5v 。
asvanced trench mosfet process technology ultra low on-resistance with low gate charge new thermally enhanced dfn2x2-6l package
application:
pwm applications load switch battery charge in cellular handset